N-канальные стандартные дискретные силовые MOSFET транзисторы повышенной надежности на напряжение 400 В
Типономинал |
Корпус |
Схема |
Полярность |
BVDSS |
Rds(on) |
ID @ 25°C |
ID @ 100°C |
Мощность рассеяния |
2N6760 |
TO-204AA |
DISCRETE |
N |
400 |
1 |
5.5 |
3.5 |
75 |
2N6768 |
TO-204AE |
DISCRETE |
N |
400 |
0.3 |
14 |
9 |
150 |
2N6786 |
TO-205AF |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
2N6792 |
TO-205AF |
DISCRETE |
N |
400 |
1.8 |
2 |
1.25 |
20 |
2N6800 |
TO-205AF |
DISCRETE |
N |
400 |
1 |
3 |
2.0 |
25 |
IRF330 |
TO-204AA |
DISCRETE |
N |
400 |
1 |
5.5 |
3.5 |
75 |
IRF340 |
TO-204AA |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
IRF350 |
TO-204AE |
DISCRETE |
N |
400 |
0.3 |
14 |
9 |
150 |
IRF360 |
TO-204AE |
DISCRETE |
N |
400 |
0.2 |
25 |
16 |
300 |
IRFE310 |
18-pin LCC |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
IRFE320 |
18-pin LCC |
DISCRETE |
N |
400 |
1.8 |
1.8 |
1.1 |
14 |
IRFE330 |
18-pin LCC |
DISCRETE |
N |
400 |
1 |
3.0 |
2 |
25 |
IRFF310 |
TO-205AF |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
IRFF320 |
TO-205AF |
DISCRETE |
N |
400 |
1.8 |
2 |
1.25 |
20 |
IRFF330 |
TO-205AF |
DISCRETE |
N |
400 |
1 |
3 |
2.0 |
25 |
IRFI360 |
TO-259AA |
DISCRETE |
N |
400 |
0.2 |
25 |
16 |
300 |
IRFM340 |
TO-254AA |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
IRFM350 |
TO-254AA |
DISCRETE |
N |
400 |
0.315 |
14 |
9 |
150 |
IRFM360 |
TO-254AA |
DISCRETE |
N |
400 |
0.2 |
23 |
14 |
250 |
IRFN340 |
SMD-1 |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
Типономинал |
Корпус |
Схема |
Полярность |
BVDSS |
Rds(on) |
ID @ 25°C |
ID @ 100°C |
Мощность рассеяния |
IRFN350 |
SMD-1 |
DISCRETE |
N |
400 |
0.315 |
14 |
9 |
150 |
IRFV360 |
TO-258AA |
DISCRETE |
N |
400 |
0.2 |
25 |
16 |
300 |
IRFY340CM |
TO-257AA |
DISCRETE |
N |
400 |
0.55 |
8.7 |
5.5 |
100 |
JANTX2N6760 |
TO-204AA |
DISCRETE |
N |
400 |
1 |
5.5 |
3.5 |
75 |
JANTX2N6768 |
TO-204AE |
DISCRETE |
N |
400 |
0.3 |
14 |
9 |
150 |
JANTX2N6786 |
TO-205AF |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
JANTX2N6786U |
18-pin LCC |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
JANTX2N6792 |
TO-205AF |
DISCRETE |
N |
400 |
1.8 |
2 |
1.25 |
20 |
JANTX2N6792U |
18-pin LCC |
DISCRETE |
N |
400 |
1.8 |
1.8 |
1.1 |
14 |
JANTX2N6800 |
TO-205AF |
DISCRETE |
N |
400 |
1 |
3 |
2 |
25 |
JANTX2N6800U |
18-pin LCC |
DISCRETE |
N |
400 |
1 |
3.0 |
2 |
25 |
JANTX2N7221 |
TO-254AA |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
JANTX2N7221U |
SMD-1 |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
JANTX2N7227 |
TO-254AA |
DISCRETE |
N |
400 |
0.315 |
14 |
9 |
150 |
JANTX2N7227U |
SMD-1 |
DISCRETE |
N |
400 |
0.315 |
14 |
9 |
150 |
JANTXV2N6760 |
TO-204AA |
DISCRETE |
N |
400 |
1 |
5.5 |
3.5 |
75 |
JANTXV2N6768 |
TO-204AE |
DISCRETE |
N |
400 |
0.3 |
14 |
9 |
150 |
JANTXV2N6786 |
TO-205AF |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
JANTXV2N6786U |
18-pin LCC |
DISCRETE |
N |
400 |
3.6 |
1.25 |
0.8 |
15 |
JANTXV2N6792 |
TO-205AF |
DISCRETE |
N |
400 |
1.8 |
2 |
1.25 |
20 |
Типономинал |
Корпус |
Схема |
Полярность |
BVDSS |
Rds(on) |
ID @ 25°C |
ID @ 100°C |
Мощность рассеяния |
JANTXV2N6792U |
18-pin LCC |
DISCRETE |
N |
400 |
1.8 |
1.8 |
1.1 |
14 |
JANTXV2N6800 |
TO-205AF |
DISCRETE |
N |
400 |
1 |
3 |
2 |
25 |
JANTXV2N6800U |
18-pin LCC |
DISCRETE |
N |
400 |
1 |
3.0 |
2 |
25 |
JANTXV2N7221 |
TO-254AA |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
JANTXV2N7221U |
SMD-1 |
DISCRETE |
N |
400 |
0.55 |
10 |
6 |
125 |
JANTXV2N7227 |
TO-254AA |
DISCRETE |
N |
400 |
0.315 |
14 |
9 |
150 |
JANTXV2N7227U |
SMD-1 |
DISCRETE |
N |
400 |
0.315 |
14 |
9 |
150 |
OM6003SR |
D2 |
DISCRETE |
N |
400 |
1.05 |
5.5 |
3.5 |
50 |
OM6040SM |
SMD-3 |
DISCRETE |
N |
400 |
1.05 |
5 |
3 |
50 |
- BVDSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- Rdson@25°C (pre-Irradiation) (Static Drain-to-Source On-Resistance) -максимальное нормированное сопротивление по постоянному току во включенном состоянии между стоком и истоком до облучения при температуре 25 °C
- N-channel и P-channel, соответственно N-канальный и P-канальный
- ID (Continuous Drain Current) - продолжительный ток стока
- Total Dose - кумулятивная доза облучения
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