IGBT повышенной надежности фирмы IR
| Типономинал |
Корпус |
Схема |
BVces |
Vce(on) Max |
Ic @ 25°C |
Ic @ 90°C |
Ic @ 100°C |
PD |
Rth(JC) |
 IRG4MC30F |
TO-254AA |
DISCRETE |
600 |
1.7 |
28 |
|
15 |
75 |
1.67 |
| IRG4MC40U |
TO-254AA |
DISCRETE |
600 |
2.1 |
35 |
|
20 |
125 |
1 |
| IRG4MC50F |
TO-254AA |
DISCRETE |
600 |
2 |
35 |
|
30 |
150 |
0.83 |
| IRG4MC50U |
TO-254AA |
DISCRETE |
600 |
2.25 |
35 |
|
27 |
150 |
0.83 |
| IRGIH50F |
TO-259AA |
DISCRETE |
1200 |
2.9 |
25 |
|
45 |
200 |
0.625 |
| IRGMC30F |
TO-254AA |
DISCRETE |
600 |
2.1 |
23 |
|
12 |
75 |
1.67 |
| IRGMC30U |
TO-254AA |
DISCRETE |
600 |
3 |
17 |
|
8 |
75 |
1.67 |
| IRGMC40F |
TO-254AA |
DISCRETE |
600 |
2 |
35 |
|
20 |
125 |
1 |
| IRGMC40U |
TO-254AA |
DISCRETE |
600 |
3 |
31 |
|
15 |
125 |
1 |
| IRGMC50F |
TO-254AA |
DISCRETE |
600 |
1.7 |
35 |
|
30 |
150 |
0.83 |
| IRGMC50U |
TO-254AA |
DISCRETE |
600 |
3 |
35 |
|
20 |
150 |
0.83 |
| IRGMH40F |
TO-254AA |
DISCRETE |
1200 |
3.6 |
24 |
|
13 |
96 |
1.3 |
| IRGMIC50U |
TO-259AA |
COPACK |
600 |
3 |
45 |
|
27 |
200 |
0.625 |
| IRGMVC50U |
TO-258AA |
COPACK |
600 |
3 |
45 |
|
27 |
200 |
0.625 |
| IRGVH50F |
TO-258AA |
DISCRETE |
1200 |
2.9 |
45 |
|
25 |
200 |
0.625 |
| OM6516SC |
TO-258AA |
DISCRETE |
1200 |
4 |
|
25 |
|
125 |
1 |
| OM6517SA |
TO-254AA |
DISCRETE |
1200 |
4 |
|
20 |
|
125 |
1 |
| OM6517SW |
D3 |
DISCRETE |
1200 |
4 |
|
20 |
|
125 |
1 |
| OM6520SC |
TO-258AA |
COPACK |
1200 |
4 |
|
25 |
|
125 |
1 |
- Vces (Maximum IGBT Blocking Voltage) - максимальное запирающее напряжение IGBT
- Vce(on) Max (Collector-to-Emitter Saturation Voltage) - максимальное напряжение насыщения коллектор-эмиттер
- Ic (Continuous Collector Current) - продолжительный ток коллектора
- PD (Power Dissipation) - рассеиваемая мощность
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
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